Ionizing Radiation Effects in MOS Devices and Circuits
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.A. R. Knudson and A. B. Campbell, aquot;Use of an Ion Microbeam to Study Single Event Upsets in Microcircuits, aquot; IEEE Trans. Nucl. Sci. NS-28, 4017- 4021 (1981). 167. John A. Zoutendyk. aquot;Modeling of Single Event Upset in Bipolar Integratedanbsp;...
| Title | : | Ionizing Radiation Effects in MOS Devices and Circuits |
| Author | : | T. P. Ma, Paul V. Dressendorfer |
| Publisher | : | John Wiley & Sons - 1989-04-18 |
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